Study of Hot-Carrier Induced Degradation in Delta-Doped and Conventional Mosfets.

Authors

  • Kwesi Diawuo

DOI:

https://doi.org/10.4314/just.v20i1,2&3.830

Keywords:

Reliability, Delta-doped, Conventional, MOSFET, Subthreshold, Transconductance, Stress, 2-D (Two Dimensional)

Abstract

A DC stress analysis has been performed to assess the reliability of delta – doped and conventional MOSFETSs. The experimental results and 2 – D computer simulations indicates that there is little variation in the threshold voltage, trans-conductance and drain current in the delta MOSFET due to stress than in conventional MOSFET

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Published

2016-02-05

Issue

Vol. 20 No. 1,2&3 (2000)

Section

Articles

License

JUST Vol. 43 Number 1 (2025) Copyright and Licensing statement

How to Cite

Study of Hot-Carrier Induced Degradation in Delta-Doped and Conventional Mosfets . (2016). Journal of Science and Technology, 20(1,2&3). https://doi.org/10.4314/just.v20i1,2&3.830